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Posted May 28, 2012 by Raj Agrawal in Technology
 
 

In Research: Is STT-MRAM The Future Of Non-Volatile Memory?

A breakthrough and a pioneering error correction technique in the data transmission process, possibly holds a key to the future of memories in of computers. Termed as Spin-torque transfer magnetic random access memory (), the improved error correction technique in STT-MRAM showed increased tolerance towards fluctuations in electrical resistance of devices, which could aid in smoother device manufacturing  process and super-fast device bootup times. And STT-MRAM promises scalability and cost-efficiency.

Via [Science Daily]

Image Source: Cospa.ntu.edu.tw

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