A breakthrough and a pioneering error correction technique in the data transmission process, possibly holds a key to the future of non-volatile
memories in next-generation
of computers. Termed as Spin-torque transfer magnetic random access memory (STT-MRAM)
, the improved error correction technique in STT-MRAM
showed increased tolerance towards fluctuations in electrical resistance of devices, which could aid in smoother device manufacturing process and super-fast device bootup times. And STT-MRAM
promises scalability and cost-efficiency.
Image Source: Cospa.ntu.edu.tw